oxygen precipitation中文是什么意思

發(fā)音:

中文翻譯
造句

氧沉淀

oxygen n. 【化學(xué)】氧，氧氣。
precipitation n. 1.猛然摔下，落下。 2.猛沖；急躁，輕率，魯莽。 ...
precipitation of oxygen 氧氣析出
amount of oxygen precipitation 析出氧氣量
precipitation n. 1.猛然摔下，落下。 2.猛沖；急躁，輕率，魯莽。 3.【化學(xué)】沉淀(作用)；降雨(量)；(雨、雪等的)降落。
precipitation precipitation 陡然下降
absorption precipitation 吸附沉淀
abundant precipitation 豐量; 過冷降水
accumulated precipitation 累積降水量
accumulation precipitation 累積降水量
acid precipitation 酸沉降; 酸性降水; 酸雨
adsorption precipitation 吸附沉淀
adsorptive precipitation 吸附沉淀
affinity precipitation 親和沉淀; 親和分配
after precipitation 后沉淀作用
after-precipitation 后沉淀作用
albumen precipitation 蛋白沉淀
alcohol precipitation 酒精沉淀法
alum precipitation 明礬沉淀反應(yīng); 明礬沉淀作用
amorphous precipitation 非晶型淀析
amount of precipitation 沉淀量; 降水量; 雨量
annual precipitation 年間降水量; 年降水量; 年雨量
antecedent precipitation 期前降雨; 前期降水量
areal precipitation 面降水量
artificial precipitation 人工降水量; 人工降雨

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例句與用法

Effects of germanium on oxygen precipitation in heavily boron - doped czochralski silicon
鍺對重?fù)脚鹬崩柚醒醭恋淼挠绊?i class="labawb" onClick="playMp3('sound_c_1')">
Oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
硅片氧沉淀特性的測定-間隙氧含量減少法
Test methods for oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
通過測量間隙氧含量的減少表征硅片氧沉淀特性的方法
Finally , the effect of rapid thermal process ( rtp ) on oxygen precipitation in hb is investigated in this paper
最后文章還系統(tǒng)研究了快速熱處理( rtp )對重?fù)脚鸸鑶尉е醒醭恋淼挠绊憽?
Fumio shimura , et al . carbon enhancement effect on oxygen precipitation in czochralski silicon [ j ] . j appl phys , 1986 , 59 : 3251
劉培東,朱愛平,張錦心等.碳和氮原子在氧沉淀中的作用[ j ] .半導(dǎo)體學(xué)報, 1999 , 20 : 107
The experimental results showed that high density of oxygen precipitation and induced - defects were formed after annealing of wafers at moderate and high temperatures
重?fù)缴楣鑶尉г谥懈邷赝嘶饡r形成密度較高的氧沉淀及誘生缺陷。
The nucleation temperature of oxygen precipitation is about 750 c in lightly doped czsi , while the nucleation in heavily as - doped si occurred at a higher temperature ( 750 - 900 c )
普通直拉硅氧沉淀在低溫750形核，重?fù)絘s硅單晶形核溫度較高，在750 - 900之間。
Both the size and density of oxygen precipitation increase with the annealing time , and the size of oxygen precipitation decrease with the increase of the annealing temperature
隨著退火時間的延長氧沉淀尺寸增大，密度略有增加；隨著退火溫度的升高，氧沉淀尺寸相對減小。
A modified ig process was suggested , through which a wider denuded - zone ( dz ) on the surface of wafers and higher density of oxygen precipitation in silicon bulk were obtained
使用改進(jìn)的內(nèi)吸除工藝，在重?fù)缴楣杵砻嫘纬闪溯^寬的清潔區(qū)，體內(nèi)形成了較高密度的氧沉淀和誘生缺陷。
Tem showed that the faults and dislocation loops introduced by the oxygen precipitation were formed when the wafers were annealed at moderate temperature , and polyhedral oxygen precipitation was generated at high temperature
對氧沉淀形態(tài)及誘生缺陷進(jìn)行了tem測試分析，結(jié)果表明，在中溫退火時出現(xiàn)氧沉淀引起的層錯和位錯環(huán)；在高溫退火后生成了多面體形狀的氧沉淀。

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